Morpho-structural and optical characterization of silicon nanowires intended for microarray substrates

One-step metal assisted chemical etching (1-MACE) of silicon (Si) resulted in vertical silicon nanowires (SiNWs). Field emission scanning electron microscopy (FE-SEM) revealed SiNWs with lengths around 6, 8 and 10 μm. High resolution X-Ray Diffraction (XRD) showed the formation of monocrystalline Si (001). Photoluminescence measurements disclosed a broad spectral band on one of the samples with four emission peaks.