The effects of probe power on the spatial variation of the room temperature photoluminescence wavelength of an InGaAsP epitaxial structure

Abstract Photoluminescence mapping is widely employed as a non-destructive characterization technique for epitaxial device structures, yielding measurements that may be correlated with final device performance. In order to obtain useful correlations, however, a number of experimental factors must be considered. We discuss herein the effect of probe laser power on the results of mapping experiments and demonstrate how increased probe power can result in underestimation of both the average properties of an epitaxial layer and its inhomogeneity.