In situ observations of Berkovich indentation induced phase transitions in crystalline silicon films.
2016
The pressure induced phase transitions of crystalline Si films were studied in situ under a Berkovich probe using a Raman spectroscopy-enhanced instrumented indentation technique. The observations suggested strain and time as important parameters in the nucleation and growth of high-pressure phases and, in contrast to earlier reports, indicate that pressure release is not a precondition for transformation to high pressure phases.
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