A Self-Powered Fast-Response Ultraviolet Detector of p–n Homojunction Assembled from Two ZnO-Based Nanowires

Nowadays, fabrication of micro/nano-scale electronic devices with bottom-up approach is paid much research attention. Here, we provide a novel micro/nano-assembling method, which is accurate and efficient, especially suitable for the fabrication of micro/nano-scale electronic devices. Using this method, a self-powered ZnO/Sb-doped ZnO nanowire p–n homojunction ultraviolet detector (UVD) was fabricated, and the detailed photoelectric properties were tested. At a reverse bias of −0.1 V under UV light illumination, the photoresponse sensitivity of the UVD was 26.5 and the rise/decay time of the UVD was as short as 30 ms. The micro/nano-assembling method has wide potential applications in the fabrication of specific micro/nano-scale electronic devices. A self-powered ZnO/Sb-doped ZnO nanowire p-n homojunction ultraviolet detector (UVD) was fabricated by using a novel micro/nano-assembling method with bottom-up approach. At reverse bias of −0.1 V under UV light illumination, the photoresponse sensitivity of the UVD was 26.5, and the rise time and decay time of the UVD were as short as 30 ms.