Self-rectification memory unit structure of resistance random access memory

The invention provides a self-rectifying memory unit structure of the resistance random access memory (RRAM). The memory unit structure of the RRAM comprises a first electrode, an insulator-metal-transition material (IMT material) layer arranged on the first electrode, a barrier layer arranged on the IMT material layer, and a second electrode arranged on the barrier layer, wherein the IMT material layer is spaced from the second electrode by the barrier layer. With the self-rectifying memory unit structure, the reliability of the RRAM can be improved.