The influence of crystal thickness on scattering and radiation of high-energy electrons in oriented crystals

Abstract This paper reports experimental data on the structure of angular distributions as a function of silicon crystal thickness and the ratio of rms scattering angles of 〈111〉-axis-oriented and random silicon crystals. Relative energy losses due to gamma radiation, for small solid angles of forward radiation, are also presented. The measurements were performed for thicknesses ranging from 0.01 to 70 mm. It is found that the greatest radiation losses of relativistic electrons in oriented silicon crystals occur at crystal thicknesses around 15 mm.