A method of producing capacitors grave

A method of manufacturing a grave capacitor, comprising the steps of: Forming a trench (5, 6) on a surface of a semiconductor substrate (1) having a first conductivity type; Forming a first insulating film (7) on a side wall of the trench (5, 6); Burying a semiconductor film (9) in the trench (5, 6) on the first insulating film (7); Etching the first insulating film (7) and the semiconductor film (9) which are arranged in an upper part of the trench (5); Depositing a second insulating film (11) on a through the etching of the first insulating film (7) and the semiconductor film (9) exposed part of the sidewall of the trench (5, 6) using a low pressure CVD method; Etching of the remaining parts in the trench of the semiconductor film (9), and the first insulating film (7); Etching that part of the trench (6) formed by the etching of the remaining semiconductor film (9) and the first insulating film (7) has been exposed, using the second insulating film (11) as a mask; ...