Surface field effect of polyaniline film

Abstract The conducting polymer PAn surface field effect transistor in which a PAn film acts as the semiconductor layer, two Au electrodes separated from each other by 20 μm are utilized as the source and the drain, a Si wafer serves as the gate and a thermally grown SiO 2 film is used as the gate insulator layer was fabricated. The obvious surface field effect of PAn film has been observed and the characteristics of the PAn surface field effect transistor has been analized.