On the formation of the crystalline phases and nanostructure of silicon carbonitride layers grown on gallium arsenide substrates

The crystallization of thin silicon carbonitride layers obtained by chemical vapor deposition from silicon organic precursors on gallium arsenide substrates at 973 K in the presence of liquid gallium drops is studied. The layers grown by the vapor-liquid-solid method are studied by IR, Raman, and energy dispersive spectroscopy, scanning electron microscopy, and X-ray diffraction using synchrotron radiation in order to determine their chemical and phase composition, crystal structure, and surface morphology. Their morphology is supposed to be associated with the formation of nuclei in a gallium drop located at the surface of the gallium arsenide substrate.