Old Web
English
Sign In
Acemap
>
Paper
>
High Reliability CoFeB/MgO/CoFeB Magnetic Tunnel Junction FabricationUsing Low-damage Ion Beam Etching
High Reliability CoFeB/MgO/CoFeB Magnetic Tunnel Junction FabricationUsing Low-damage Ion Beam Etching
2019
H. Park
A. Teramoto
J. Tsuchimoto
K. Hashimoto
Tomoyuki Suwa
M. Hayashi
R. Kuroda
Shigetoshi Sugawa
Keywords:
ion beam etching
Tunnel magnetoresistance
Reliability (semiconductor)
Optoelectronics
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]