Integrated circuit copper polishing solution used at low down pressure

The invention relates to an integrated circuit copper polishing solution used as low down pressure and belongs to the technical field of micro-electronic auxiliary materials and ultra-precision machining technologies. The polishing solution provided by the invention comprises abrasive particles, an oxidizing agent, deionized water, a compound inhibitor, a compound complexing agent and a silica sol bridging agent. The polishing solution can realize high removal rate and high surface evenness of copper polishing under the low down pressure (below 1 psi) condition.