Type-II Tunable SiC/InSe Heterostructure in Electric Field and Biaxial Strain

In this study, first-principles calculations based on the density functional theory (DFT) are exploited to investigate the electronic capabilities of the SiC/InSe heterostructure. According to our results, the SiC/InSe heterostructure possesses an inherent type-II band alignment, which displays a noticeable Stark effect in band gap under a stable electric field. Besides, the heterostructure exhibits a low carrier effective mass and a narrower band gap when it is subject to tensile strain. More interestingly, the transition from indirect to direct band gap occurs when 8% compressive strain is applied. Taken together, findings in this study indicate that, the SiC/InSe heterostructure opens up a new channel in the field of optoelectronic and microelectronic applications.