Improvement of Hydrogenated Amorphous Silicon n-i-p Diode Performance by H2 Plasma Treatment for i/p Interface

Hydrogenated amorphous silicon (a-Si:H) n-i-p diodes in which the intrinsic (i-type) layer surfaces were exposed to an H2 plasma before depositing the p-type layer (H2 plasma treatment of the i/p interface) were prepared. The effects of this H2 plasma treatment of the i/p interface were observed by dark I-V, photo-I-V under 450 nm illumination, and quasistatic C-V measurements. It has been found that the defect density at the i/p interface is reduced by this treatment. It has also been determined that the performance of a-Si:H diodes is improved by this treatment of the interface.