W-band pulsed radar receiver in low cost CMOS

A CMOS heterodyne receiver integrating a phase-locked loop that includes a bulk of transmitter functions for W-band pulsed radar is realized using low leakage transistors of a low cost 65-nm bulk CMOS process with 5 thin and 1 thick metal layers used to manufacture cell phone RFIC's. The peak conversion gain of receiver is 7 dB and the minimum NF is 10.8 dB between 78 and 88 GHz in measurement. The entire receiver front-end consumes ∼190 mW.