Comprehensive analysis of two-dimensional charge transport mechanism in thin-film transistors based on random networks of single-wall carbon nanotubes using transient measurements

Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes (SWCNT-TFTs) is essential for further advances to improve the potential for various nanoelectronic applications. Herein, a comprehensive investigation of the two-dimensional (2D) charge transport mechanism in SWCNT-TFTs is reported by analyzing the temperature-dependent electrical characteristics determined from the direct-current and non-quasi-static transient measurements at 80–300 K. To elucidate the time-domain charge transport characteristics of the random networks in the SWCNTs, an empirical equation was derived from a theoretical trapping model, and a carrier velocity distribution was determined from the differentiation of the transient response. Furthermore, charge trapping and de-trapping in shallow- and deep-traps in SWCNT-TFTs were analyzed by investigating charge transport based on their trapping/de-trapping rate. The comprehensive analysis of this study provides fundamental insights into the 2D charge transport mechanism in TFTs based on random networks of nanomaterial channels.