X-ray analyzer and semiconductor manufacturing device using the same

PURPOSE: To monitor the film deposition process in the local region on a substrate surface within MOCVD(Metal Organic Chemical Vapor Deposition) or ALE(Atomic Layer Epitaxy) wherein a film is to be deposited at the pressure exceeding 10 -3 Torr using a gas source material. CONSTITUTION: Within a MOCVD device, a substrate 6 surface is irradiated with the X-rays emitted from a beam source 1 using focussing mirror 3 at an oblique incident angle close to critical total reflection angle. At this time, the X-ray signals transmitted from the substrate 6 surface are detected using an X-ray detector 5. Accordingly, the state of a deposited film on the substrate 6 surface can be monitored by a high lateral resolving power even at the pressure exceeding 10 -3 Torr thereby enabling the pertinent deposition process requirements to be decided meeting the deposition requirements. COPYRIGHT: (C)1993,JPO&Japio