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Growth mode of epitaxial $Si_{0.5}Ge_{0.5}$ alloy layer grown on Si(100) by ion beam assisted deposition
Growth mode of epitaxial $Si_{0.5}Ge_{0.5}$ alloy layer grown on Si(100) by ion beam assisted deposition
1995
Sang-Uk Park
Hong-Gu Baek
Keywords:
Materials science
Metallurgy
Ion beam-assisted deposition
Alloy
Epitaxy
Composite material
Correction
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