Failure analysis of shallow trench isolated ESD structures
1995
Scanning-electron microscopes and atomic-force microscopes are used to analyze surface and sub-surface ESD-induced failure mechanisms in 0.25- and 0.5-/spl mu/m shallow trench isolated CMOS technology ESD structures and n-channel MOSFETs; ESD failure-mechanism types are characterized and classified; and additional failure-analysis techniques and tools are discussed.
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