High power cw operation of GaAs/GaAlAs surface‐emitting lasers mounted in the junction‐up configuration

High power cw operation of horizontal cavity monolithic GaAs/GaAlAs surface‐emitting lasers with all dry etched micromirrors in the junction‐up configuration has been demonstrated for the first time. The 45° and 90° mirrors of the devices were fabricated by ion beam etching and reactive ion etching techniques, respectively. Typical threshold current densities of less than 360 A/cm2, external differential efficiencies of 22% (0.34 W/A) from the emitting facet, and output powers in excess of 280 mW were achieved under cw operation.