Mid-IR-Sensitive n/p-Junction Fabricated on p-Type Si Surface via Ultrashort Pulse Laser n-Type Hyperdoping and High-Temperature Annealing

The mid-infrared (IR)-sensitive n/p-junction was fabricated on a p-doped silicon (Si) wafer via ultrashort laser n-type surface hyperdoping and high-temperature annealing. First, the n-type sulfur ...