Thermal stability of ruthenium MOS gate electrodes

In this paper, thermal stability o/metal-organics vapour deposited (MOCVD) Ru gate electrodes grown on atomic-layer deposited (ALD) Hf0 2 dielectric films have been analysed. As-deposited MOS capacitors were annealed in forming gas (10% H 2 + 90% N 2 ) at temperature range 430 - 590 °C for 30 min. MOS capacitors were analysed by high-frequency capacitance-voltage (G-V), conductance-voltage (G-V) and current voltage (I-V) measurements resulting density of oxide charge, N eff , density of interface states, D ii and leakage current density, J leak respectively.