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Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC
Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC
2019
Aikaterini Flessa
E. Ntemou
M. Kokkoris
E. Liarokapis
Marko Gloginjić
Srdjan Petrović
M. Erich
Stjepko Fazinić
Marko Karlušić
Kristina Tomić
Keywords:
Raman spectroscopy
Analytical chemistry
Chemistry
Silicon carbide
Ion implantation
raman mapping
Correction
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