A thermally induced junction between impurity-conduction and intrinsic-conduction regions
2011
It is demonstrated that, by applying a high temperature gradient along a p-type germanium sample, it is possible to obtain a steady state where adjacent regions of impurity (hole) conduction and intrinsic conduction coexist to form a so-called thermally induced junction capable of current rectification. The “contact potential” of such a junction is calculated.
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