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Surface orientation dependence of Ge channel flattening process on Ge nMOSFETs
Surface orientation dependence of Ge channel flattening process on Ge nMOSFETs
2020
H. Ishii
Wen Hsin Chang
Toshifumi Irisawa
Wataru Mizubayashi
Hiroyuki Ishii
Tatsuro Maeda
Keywords:
Materials science
Communication channel
Orientation (geometry)
Germanium
surface
Flattening
Condensed matter physics
Correction
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