Optimization of hollow cathode discharge electrode for damage free remote plasma removal process for semiconductor manufacturing

Cone-shaped hollow cathode electrode configuration for a damage free remote plasma removal process has been optimized for given pressures based on Paschen characteristic curves, voltage–current characteristics and time-resolved discharge observations as well as oxide film removal performances. Remote plasmas have been generated in two types of cone-shaped electrodes with mixtures of He, NF3, and NH3 for pressure range of 1–30 Torr. Paschen characteristic curves and voltage–current (V–I) characteristics define an operating pressure for low breakdown voltage and the hollow cathode effect to minimize the particles. Sinusoidal voltage waveform and asymmetry electrode configuration alternate the glow discharge and hollow cathode discharge modes in a cycle. The current and infrared emission intensity from the glow discharge increases together for both cone-shaped electrodes with increasing pressure, whereas the hollow cathode discharge plasma emits strong infrared only when pD condition is satisfied. For the wide cone electrode configuration, high voltage operation at higher pressure results in particle contamination on the processed wafer by high energy ion bombardment. Operating at optimum pressure for a given electrode configuration shows faster oxide etch rate with better uniformity over a whole 300 mm wafer.