Hybrid InGaAs/SiGe technology platform for CMOS applications

High-mobility channel materials such as indium-galium-arsenide (InGaAs) and silicon-germanium(SiGe) alloys are considered to be the leading candidates for replacing silicon (Si) in future lowpower complementary metal-oxide-semiconductor (CMOS) circuits. Numerous challenges haveto be tackled in order to turn the high-mobility CMOS concept into an industrial solution. Thisthesis addresses the majors challenges which are the integration of InGaAs on Si, the formationof high-quality gate stacks and self-aligned source and drain (S/D) regions, the optimizationof self-aligned transistors and the co-integration of InGaAs and SiGe into CMOS circuits. Allinvestigated possible solutions are proposed in the framework of very-large-scale integration requirements.Chapter 2 describes two different methods to integrate InGaAs on Si. Chapter 3 detailsthe developments of key process modules for the fabrication of self-aligned InGaAs metal-oxidesemiconductorfield-effect transistors (MOSFETs). Chapter 4 covers the realization of varioustypes of self-aligned MOSFETs towards the improvement of their performance. Finally, chapter5 demonstrates three different methods to make hybrid InGaAs/SiGe CMOS circuits.