Source/drain engineering for MOSFETs with embedded-Si:C technology

Embedded silicon carbon alloy (e-Si:C) technology for source and drain (S/D) is expected to improve nMOSFET drive current. The distribution and activation characteristics of arsenic in Si:C film and the interfacial solid-phase reaction of the Ni/Si:C system were studied with the aim of achieving the maximum improvement of the characteristics of e-Si:C S/D. It was clarified that the active carrier concentration of Si:C decreased with increasing carbon concentration compared to the control Si. There is concern that the low doping activation in Si:C increases series resistance of e-Si:C S/D nMOSFETs and degrades the performance gain expected from the strain effect.