Cat-CVD SiN insulated-gate AlGaN/GaN HFETs with 163 GHz f/sub T/ and 184 GHz f/sub max/

In conclusion, we demonstrated AlGaN/GaN HFETs with f T =163 GHz and f max =184 GHz by using thin, high-Al-composition barrier layers, Cat-CVD SiN gate-insulating and passivation layers, and 60-nm T-gates defined by EB lithography