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Improvement of RF performance of GaN-HEMT on silicon substrate
Improvement of RF performance of GaN-HEMT on silicon substrate
2015
Makabe Isao
Ichikawa Hiroyuki
Yui Keiichi
Kouchi Tsuyoshi
Inoue Kazutaka
Nakata Ken
Keywords:
Substrate (chemistry)
Electronic engineering
Materials science
High-electron-mobility transistor
Silicon
Parasitic capacitance
si substrate
Optoelectronics
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