Fast Low-Current Spin-Orbit-Torque Switching of Magnetic Tunnel Junctions through Atomic Modifications of the Free-Layer Interfaces

Developing cache memory cells is of great interest for next-generation integrated circuits, where both high speed and low energy consumption will be essential. This study utilizes the giant spin Hall effect to demonstrate that, by successfully modifying the interfaces in a magnetic tunnel junction to improve its magnetic properties, a significant reduction of switching current can be achieved. The experiments also demonstrate nanosecond-scale pulse switching with high reliability, due to beneficial assistance from fieldlike torque. With clear potential for further optimization, these developments show great promise for high-performance memory technology.