Properties of silicon thin films grown by the temperature difference method (TDM)

In this paper we describe the temperature difference method (TDM) as a promising technology for the continuous growth of thin film silicon from the solution on large area polycrystalline substrates (10/spl times/10 cm/sup 2/). The thermodynamic driving force of the layer growth by TDM is generated by a temperature gradient perpendicular to the substrate surface. Silicon thin films have been grown from In/Ga-solutions at 980/spl deg/C. A temperature gradient of 10 K/cm allows a growth rate of 0.3 /spl mu/m/min. Doping concentrations from 10/sup 16/ to 2/spl times/10/sup 18/ cm/sup -3/ are adjustable. Minority charge carrier life times of 5-10 /spl mu/s were determined in 30 /spl mu/m thick layers by TRMC (time resolved microwave conductivity) measurements. Additionally first growth results of Si-LPE on silicon seeded substrates are presented.