Single-polycrystalline silicon cmos active pixel

PROBLEM TO BE SOLVED: To form an active pixel with a simple process by a method, wherein a 1st diffused region is placed between a photogate and a transmission transistor gate and, further, made to function as the source of the transmission transistor and a 2nd diffused region is made to function as the drain of the transmission transistor. SOLUTION: A single-polycrystalline silicon active pixel 36 has a coupling region placed between a photogate and a transmission gate. The coupling diffused region 112, a diffused region 110 and the transmission gate function as the source coupling diffused region, drain diffused region and gate of a transistor act integrally. Therefore, a transmission transistor 113 is composed of the coupling region 112, diffused region 110 and the transmission gate 108. Further, if a proper bias is applied, the coupling diffused region functions as a conductive channel between substrate regions 103 and 104 which provides a desired electrical coupling. COPYRIGHT: (C)1996,JPO