Detection circuit for NTC temperature sensor inside multi-channel IGBT (insulated gate bipolar transistor) of power unit

The utility model relates to a detection circuit for an NTC temperature sensor inside a multi-channel IGBT (insulated gate bipolar transistor) of a power unit. The detection circuit comprises at least 16 NTC temperature sensor acquisition circuits, a 16-channel analog gating chip, a signal optocoupler isolation circuit, a voltage following circuit and a high-voltage linear optocoupler isolation circuit, wherein the 16-channel analog gating chip parallelly receives temperature signals acquired by the 16 NTC temperature sensor acquisition circuits; output of the signal optocoupler isolation circuit is connected to the 16-channel analog gating chip; the voltage following circuit is connected to output of the 16-channel analog gating chip; and the high-voltage linear optocoupler isolation circuit is connected to output of the voltage following circuit. The detection circuit provided by the utility model can control temperature signal acquisition of 16 paths at most through 4 paths of coded signals, thereby meeting a requirement of high-reliability isolation of the NTC temperature sensor inside the IGBT, and meeting requirements of elaborate circuit design, low cost, flexible control and the like.