Application Of Electron-beam Direct-writing Technology To High-density 0.8amu;m CMOS ASICs And WSI Neurocomputers

New Electron-Beam Direct-Writing (EB-DW) technology using a conductive bottom layer resist, toluene soaking, and a new proximity-effect correction method is applied to high-density O.8pm CMOS ASICs and a WSI neurocomputer consisting of three metal layers. Pattern data processing is also improved. Experiments show good results for gate arrays and completely-functional WSI neurocomputers.