First-principles study of the electronic structure and optical properties of Ce-doped ZnO

Density functional theory calculations by using both generalized gradient approximation (GGA) method and the GGA with considering strong correlation effect (GGA+U) were performed to elucidate the effect of Ce-4f orbit on the electronic structure of ZnO. It is found that after the cerium incorporation, a new localized band appears between the valence and conduction bands, which corresponds to the majority spin of Ce-4f states. It is this localized band that constructs a bridge between the valence and conduction states, which will improve the optical performance of ZnO. ZnO:Ce is a degenerate semiconductor. The strong correlation effect is very important for the 4f orbit of the Ce atom in ZnO:Ce. The mismatch of the majority and minority spin for the Ce-4f, Ce-5d states and the spin-polarized holes in O-2p states induced by Ce doping leads to the presence of the magnetic order for ZnO:Ce. We also studied the band structure and optical properties of ZnO:Ce with lacking one electron and two electrons, respect...