Measurement of the silicon resistivity at very high temperature with junction isolated van der Pauw structures
2004
The limits of the traditional experiment approach to extract resistivity in junction-isolated samples are discussed basing both on physical simulations and on extensive experimental data. Several optimization criteria to design van der Pauw resistors and a related characterization procedure are proposed and experimentally validated in order to extend the extraction of the resistivity up to 500/spl deg/C.
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