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A Study of selective area growth of GaN for applying to three-dimensional channel transistors
A Study of selective area growth of GaN for applying to three-dimensional channel transistors
2016
Hiroki Kuroiwa
Yusuke Takei
Tokio Takahashi
Toshihide Ide
Mitsuaki Shimizu
Kazuo Tsutsui
Kuniyuki Kakushima
Hitoshi Wakabayashi
Hiroshi Iwai
Keywords:
Transistor
Electronic engineering
Materials science
Communication channel
Optoelectronics
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