LEDs based on p‐type ZnO nanowires synthesized by electrochemical deposition method

The data concerning the light-emitting diodes based on ZnO homojunction with ITO/n -ZnO/p -ZnO+photoresist/Au/Ti and ITO/n -ZnO/p -ZnO+pho-toresist+PEDOT:PSS/Au/Ti structures are reported. The p -ZnO nanowires were grown by electrochemical deposition method. It is suggested that the p -type conductivity first of all is connected with the zinc vacancies VZn. The clear rectifying behavior was observed on the current-voltage curve of the ZnO p -n homojunction. The broad electroluminescence (EL) emission bands in the blue, green and red regions lead to observation of the white light by a naked eye under forward bias. The intrinsic defects such as Zni, VZn, Vo and Oi would be responsible for occurrence of these bands. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)