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Comparison of electrical properties for n-GaN on sapphire between THz ellipsometry and Hall effect measurement
Comparison of electrical properties for n-GaN on sapphire between THz ellipsometry and Hall effect measurement
2016
Shiho Asagami
Kohei Tachi
Takashi Fujii
Tsutomu Araki
Yasushi Nanishi
Takeshi Nagashima
Toshiyuki Iwamoto
Yukinori Sato
Naotake Morita
Ryuichi Sugie
Satoshi Kamiyama
Keywords:
Hall effect
Ellipsometry
Semiconductor
Analytical chemistry
Terahertz radiation
Optoelectronics
Sapphire
Materials science
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