Efficient physical defect model applied to PBTI in high-κ stacks

Instabilities in MOS-based devices with various substrates ranging from Si, SiGe, IIIV to 2D channel materials, can be explained by defect levels in the dielectrics and non-radiative multi-phonon (NMP) barriers. However, recent results obtained on single defects have demonstrated that they can show a highly complex behaviour since they can transform between various states. As a consequence, detailed physical models are complicated and computationally expensive. As will be shown here, as long as only lifetime predictions for an ensemble of defects is needed, considerable simplifications are possible. We present and validate an oxide defect model that captures the essence of full physical models while reducing the complexity substantially. We apply this model to investigate the improvement in positive bias temperature instabilities due to a reliability anneal. Furthermore, we corroborate the simulated defect bands with prior defect-centric studies and perform lifetime projections.