Relative magnetoresistance in polycrystalline In–Cu chalcogenides under high pressure up to 50 GPa

This paper is devoted to the investigation of relative magnetoresistance MR in semiconductor polycrystalline materials: CuInAsS3, CuInAsSe3, CuInS2 and CuInSe2 under high pressures up to 50 GPa and at a constant transverse magnetic field. The pressure ranges of significant changes in the behavior of electrical resistance and magnetoresistance were identified for these materials. The features in the properties of CuInSe2, CuInS2 and CuInAsSe3 at these pressures are consistent with the data on the baric structural phase transitions in these materials. In the case of CuInAsS3 and CuInAsSe3 a shift of pressure intervals in which phase transitions can occur is observed that can be explained by an effect of chemical compression due to the changing the atom radii of the chemical elements forming the compounds.