A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter

This paper presents a robust and easy-to-implement approach to measure junction temperature of SiC power devices using quasi-threshold voltage as temperature sensitive electrical parameter with adjustable temperature sensitivity. Static and dynamic measurements were performed and compared on a commercially available 1.2 kV/120 A SiC power module. The voltage drop across the parasitic inductor is used as the trigger for the data acquisition circuit. A robust approach by using a D-flip-flop for latching in data acquisition circuit while keeping fast turn-on behavior and low noise susceptibility in consideration with the option of variable sensitivity has been successfully implemented and presented.