Thin film transistor and manufacturing method thereof

A thin film transistor is formed by overlapping a substrate, a gate electrode, a gate insulation layer, an active channel layer and a source-drain electrode, wherein the active channel layer is an organic/inorganic complex perovskite thin film, the thickness of a thin film of the gate electrode is 1 micrometer, the thickness of a thin film of the gate insulation layer ranges from 200 nanometers to 400 nanometers, the thickness of the thin film of the active channel layer ranges from 200 nanometers to 300 nanometers, and the thickness of a thin film of the source-drain electrode is 1 micrometer. The thin film transistor has the advantages that organic/inorganic complex perovskite materials are used for the active channel layer of the thin film transistor, the advantage of high mobility of an inorganic semiconductor and the advantages of flexibility, cheapness and simple low-temperature manufacturing of an organic semiconductor are combined, and therefore the thin film transistor has higher drive capability than an organic thin film transistor and has the capacity of being simple, low in cost and likely to be manufactured on a flexible substrate in a large-area mode; a manufacturing method of the thin film transistor is simple to implement and beneficial to industrialized application.