Properties of semiconductor scintillators ZnSe(Te,O) and integrated scintielectronic radiation detectors based thereon

Data are presented on properties of a new type of scintillator based on isovalent doped crystals of zinc selenide. Depending upon concentration of activating dopants Te and O, maximum of luminescence spectrum is 590-640 nm, response time 1-50 /spl mu/s, afterglow level after 5 ms not more than 0.01-0.05%. Conversion efficiency is 3-6% higher, and radiation stability /spl sim/1000 times higher than for CsI(Tl) crystals. Accounting for their optical and physical properties, this type of scintillator is most suitable for tomography uses in "scintillator-photodiode" detectors. Unique property combination of highly efficient scintillator and semiconductor, characteristic for ZnSe(Te), allowed to create integrated scintielectronic detectors of X-ray radiation of type "photosensitive heterostructure A/sup II/B/sup VI/-semiconductor scintillator ZnSe(Te)". Detectors of charged particles and UV-radiation based on Schottky barrier structure of "metal-nZnSe(Te)" has been also developed, with threshold sensitivity not worse than 10/sup -15/ W/spl middot/cm/sup 2//spl middot/Hz/sup 1/2/, and quantum efficiency of 0.3-0.4 electron/quantum in UV-region 0.20-0.47 /spl mu/m.