Sol–gel synthesis and electrical characterization of Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} thin films

Graphical abstract: Display Omitted Highlights: ► Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) thin films on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates prepared by sol–gel. ► Ethylacetoacetate (EAA) used as a replacement for highly toxic 2-methoxyethanol. ► 0.4 μm thick BLT film has 2P{sub r} ∼ 21 μC/cm{sup 2} and 2E{sub c} of ∼195 kV/cm at 300 kV/cm, er = 140 and tan δ = 0.025, 1 kHz. ► BLT films with improved dielectric response when prepared form ethylacetoacetate (EAA). -- Abstract: Lanthanum bismuth titanate (Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}) (BLT) thin films on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates were prepared by sol–gel using ethylacetoacetate (EAA) as a replacement for the highly toxic 2-methoxyethanol. EAA is used as a modifier to stabilize the metal alkoxide. At 450 °C films are amorphous. After annealing at 650 °C films are crystalline and present good dielectric and ferroelectric properties. A 0.4 μm thick BLT film exhibits 2P{sub r} of ∼21 μC/cm{sup 2} and 2E{sub c} of ∼195 kV/cm at 300 kV/cm. The dielectric constant and dielectric losses of these BLT films at 1 kHz are 140 and 0.025, respectively.