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Critical parameters for growth of optimized GaN and InGaN/GaN MQW structures on freestanding HVPE GaN substrates by MOCVD
Critical parameters for growth of optimized GaN and InGaN/GaN MQW structures on freestanding HVPE GaN substrates by MOCVD
2007
James R. Grandusky
Vibhu Jindal
Neeraj Tripathi
Fatemeh Shahedipour Sandvik
A. Vertiatchikh
Greg Dunne
H. Lu
E.B. Kaminsky
Rajesh Melkote
Keywords:
Optoelectronics
Metalorganic vapour phase epitaxy
Materials science
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