Old Web
English
Sign In
Acemap
>
Paper
>
Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology
Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology
2001
Nicholas G. Wright
S. Ortolland
G. J. Phelps
Anthony ONeill
Alton B. Horsfall
Kazuhiro Adachi
C.M. Johnson
Andrew P. Knights
Paul G. Coleman
C. P. Burrows
Keywords:
Residual
Implant
Biomedical engineering
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]