Memory Thin Film Transistor with Monolayered Nanoparticles through Chemical and Biological Bindings

Recently, organic memory device have been introduced using nanoparticles (NPs) as floating gate layer in a structure of thin film transistor (TFT). The nanoparticles could be metal-based such as Au and Ag NPs [1,2]. Moreover, the substrate for the memory TFT could be developed on flexible polyimide (PI) [1]. For fabrication of the floating gate layer, A formation of self assembly monolayer (SAM) with the NPs is essential process on the surface of dielectric layer. So far, the method for the SAM formation have been limited to electrostatic interaction between capped NPs and functionalized dielectric surface [1,2]. In this study, more versatile methods of formation of the SAM NPs are discussed for the memory TFTs.