Illuminated ballistic camel diode: a new optoelectronic negative resistance device
1988
An appropriately designed illuminated ballistic camel diode (IBCD) should exhibit a negative resistance range of its current/voltage characteristics by the decrease of temporarily trapped, photoelectrically released minority carriers with increasing applied voltage. Integration with a p-n light-emitting diode in a heterostructure provides a bistable memory element.
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