Phase transformations in II–V semiconductors under high pressure

The resistivity and Hall coefficient in n-CdAs2 and p-ZnAs2 are measured at room temperature under a hydrostatic pressure as high as 9 GPa and quasi-hydrostatic pressure as high as 50 GPa. For n-CdAs2, the phase transition is found at P = 5.5 GPa, and for p-ZnAs2, two phase transitions take place; the first at P = 10–15 GPa, and the second at P = 35–40 GPa.